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Transistor Made Using a Single Atom May Help Beat Moore's Law

Submitted by Bob-45 on Tue, 02/21/2012 - 05:54

Sci & Tech

Tuesday, February 21, 2012

Feb. 20 (Bloomberg) -- Scientists have taken a first early step toward escaping the limits of a technological principle called Moore's Law by creating a working transistor using a single phosphorus atom.

The atom was etched into a silicon bed with "gates" to control electrical flow and metallic contacts to apply voltage, researchers reported in the journal Nature Nanotechnology. It is the first such device to be precisely positioned using a repeatable technology, they said, and may one day help ease the way toward creation of a so-called quantum computer that would be significantly smaller and faster than existing technology.

Moore's law states that the number of transistors that can be placed on an integrated circuit doubles every 18 months to two years, and it's predicted to reach its limit with existing technology in 2020. Cutting the size of a transistor to a single atom may defeat that concept.

This is pretty exciting

Submitted by jzchmst on Thu, 03/15/2012 - 19:32. Permalink

I do research in a chemistry lab tackling a similar problem, but at much higher temperatures. This is interesting news but the temperatures used are incredibly low, 38 K where the lowest is 0 K which cannot be reached. The energy used to keep it at such low temperatures would not make it marketable, but still interesting none-the-less.